Semiconductor device

ABSTRACT

According to one embodiment, a semiconductor device includes a semiconductor chip, first and second conductive members, a first connection member, and a resin portion. The first conductive member includes first and second portions. The second portion is electrically connected to the semiconductor chip. A direction from the semiconductor chip toward the second portion is aligned with a first direction. A direction from the second portion toward the first portion is aligned with a second direction crossing the first direction. The second conductive member includes a third portion. The first connection member is provided between the first and third portion. The first connection member is conductive. The resin portion includes a first partial region. The first partial region is provided around the first and third portions, and the first connection member. The first portion has a first surface opposing the first connection member and including a recess and a protrusion.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.15/914,628 filed May 7, 2018, allowed, and is based upon and claims thebenefit of priority from Japanese Patent Application No. 2017-215465,filed on Nov. 8, 2017; the entire contents of which are incorporatedherein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor device.

BACKGROUND

There is a semiconductor device in which a semiconductor chip is sealedwith a resin. It is desirable to suppress the fluctuation of thecharacteristics of the semiconductor device.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A to FIG. 1C are schematic views illustrating a semiconductordevice according to a first embodiment;

FIG. 2 is a schematic view illustrating the semiconductor deviceaccording to the first embodiment;

FIG. 3 is a graph illustrating the experimental results relating to thesemiconductor device;

FIG. 4A and FIG. 4B are cross section microscope photographsillustrating the semiconductor devices;

FIG. 5 is a schematic cross-sectional view illustrating thesemiconductor device according to the first embodiment;

FIG. 6A to FIG. 6D are schematic cross-sectional views illustratingother semiconductor devices according to the first embodiment;

FIG. 7 is a schematic cross-sectional view illustrating anothersemiconductor device according to the first embodiment;

FIG. 8A to FIG. 8D are schematic cross-sectional views illustratingother semiconductor devices according to the first embodiment;

FIG. 9A to FIG. 9C are schematic cross-sectional views illustrating amethod for manufacturing a portion of a semiconductor device accordingto a second embodiment;

FIG. 10A to FIG. 10E are schematic cross-sectional views illustratingthe method for manufacturing the semiconductor device according to thesecond embodiment;

FIG. 11 is a schematic cross-sectional view illustrating a semiconductordevice according to a third embodiment;

FIG. 12 is a schematic cross-sectional view illustrating anothersemiconductor device according to the third embodiment;

FIG. 13 is a cross section microscope photograph illustrating thesemiconductor device according to the third embodiment;

FIG. 14 is a table showing the evaluation results of the semiconductordevices; and

FIG. 15 is a table showing evaluation results of the semiconductordevice.

DETAILED DESCRIPTION

According to one embodiment, a semiconductor device includes asemiconductor chip, a first conductive member, a second conductivemember, a first connection member, and a resin portion. The firstconductive member includes a first portion and a second portion. Thesecond portion is electrically connected to the semiconductor chip. Adirection from the semiconductor chip toward the second portion isaligned with a first direction. A direction from the second portiontoward the first portion is aligned with a second direction crossing thefirst direction. The second conductive member includes a third portion.The first connection member is provided between the first portion andthe third portion. The first connection member is conductive. The resinportion includes a first partial region. The first partial region isprovided around the first portion, the third portion, and the firstconnection member. The first portion has a first surface opposing thefirst connection member. The first surface includes a recess and aprotrusion. The recess includes at least one of a first bottom portion,a first distance, or a second distance. At least a portion of the firstbottom portion is perpendicular to the first direction. The firstdistance is a distance between the recess and the second portion. Thefirst distance is longer than a distance between the protrusion and thesecond portion. The second distance is a distance along the firstdirection between the recess and the third portion. The second distanceincreases along an orientation from the second portion toward the firstportion.

According to another embodiment, a semiconductor device includes asemiconductor chip, a first conductive member, a second conductivemember, a first connection member, and a resin portion. The firstconductive member includes a first portion and a second portion. Thesecond portion is electrically connected to the semiconductor chip. Adirection from the semiconductor chip toward the second portion isaligned with a first direction. A direction from the second portiontoward the first portion is aligned with a second direction crossing thefirst direction. The second conductive member includes a third portionand a fourth portion. The first connection member is provided betweenthe first portion and the third portion. The first connection member isconductive. The resin portion includes a first partial region. The firstpartial region is provided around the first portion, the third portion,and the first connection member. At least a portion of the fourthportion is not covered with the resin portion. A direction from thethird portion toward the fourth portion is aligned with a thirddirection crossing the first direction. The third portion has a secondsurface opposing the first connection member. The second surfaceincludes a recess and a protrusion. The recess includes at least one ofa second bottom portion, a third distance, or a fourth distance. Atleast a portion of the second bottom portion is perpendicular to thefirst direction. The third distance is a distance between the recess andthe fourth portion. The third distance is longer than a distance betweenthe protrusion and the fourth portion. The fourth distance is a distancealong the first direction between the recess and the first portion. Thefourth distance increases along an orientation from the fourth portiontoward the third portion.

Various embodiments will be described hereinafter with reference to theaccompanying drawings.

The drawings are schematic and conceptual; and the relationships betweenthe thickness and width of portions, the proportions of sizes amongportions, etc., are not necessarily the same as the actual valuesthereof. Further, the dimensions and proportions may be illustrateddifferently among drawings, even for identical portions.

In the specification and drawings, components similar to those describedor illustrated in a drawing therein above are marked with like referencenumerals, and a detailed description is omitted as appropriate.

First Embodiment

FIG. 1A to FIG. 1C are schematic views illustrating a semiconductordevice according to a first embodiment. FIG. 2 is a schematic viewillustrating the semiconductor device according to the first embodiment.

FIG. 1C is a perspective view. FIG. 1B is a line A1-A2 cross-sectionalview of FIG. 1C. FIG. 1A and FIG. 2 are cross-sectional views in whichportion PA shown in FIG. 1B is enlarged. Examples of the configurationof the line B1-B2 cross section of FIG. 1C are described below.

As shown in FIG. 1B and FIG. 1C, the semiconductor device 110 accordingto the embodiment includes a semiconductor chip 10, a first conductivemember 21, a second conductive member 22, a third conductive member 23,a first connection member 41, a second connection member 42, a thirdconnection member 43, and a resin portion 30. A fourth conductive member24 and a fifth conductive member 25 may be further provided as shown inFIG. 1C.

In one example, the semiconductor chip 10 is a transistor. As shown inFIG. 1A, the semiconductor chip 10 includes a first electrode 11 (e.g.,a source electrode), a second electrode 12 (e.g., a drain electrode),and a semiconductor layer 10 s. In the example, the semiconductor layer10 s is provided between the first electrode 11 and the second electrode12.

As shown in FIG. 1C, the semiconductor chip 10 may further include athird electrode 13 (e.g., a gate electrode). For example, the fourthconductive member 24 is electrically connected to the third electrode13. The fifth conductive member 25 is electrically connected to thefourth conductive member 24. Examples of the fourth conductive member 24and the fifth conductive member 25 are described below.

As shown in FIG. 1B, the first conductive member 21 includes a firstportion p1 and a second portion p2. In the example, the first conductivemember 21 further includes a first middle portion mp1.

The second portion p2 is electrically connected to the semiconductorchip 10. In the example, the second portion p2 is electrically connectedto the first electrode 11 (e.g., the source electrode) (referring toFIG. 1A).

The direction from the semiconductor chip 10 toward the second portionp2 is aligned with a first direction (a Z-axis direction). For example,the second portion p2 is positioned above the semiconductor chip 10.

One direction perpendicular to the Z-axis direction is taken as anX-axis direction. A direction perpendicular to the Z-axis direction andthe X-axis direction is taken as a Y-axis direction.

The direction from the second portion p2 toward the first portion p1 isaligned with a second direction. The second direction crosses the firstdirection (the Z-axis direction). In the example, the second directionis the X-axis direction. For example, at least a portion of the firstconductive member 21 extends along the X-axis direction.

The first middle portion mp1 is positioned between the second portion p2and the first portion p1 in the second direction (the X-axis direction).The position of the first middle portion mp1 in the second direction isbetween the position of the second portion p2 in the second directionand the position of the first portion p1 in the second direction. In theexample, the first middle portion mp1 is positioned higher than thesecond portion p2 and the first portion p1.

The second conductive member 22 includes a third portion p3 and a fourthportion p4. The direction from the third portion p3 toward the fourthportion p4 is aligned with a third direction. The third directioncrosses the first direction (the Z-axis direction). In the example, thethird direction is the X-axis direction and is aligned with the seconddirection.

As shown in FIG. 1A, the first connection member 41 is provided betweenthe first portion p1 and the third portion p3. The first connectionmember 41 is conductive. The first connection member 41 includes, forexample, solder.

The first electrode 11 (e.g., the source electrode) of the semiconductorchip 10 is electrically connected to the second conductive member 22 viathe first conductive member 21 and the first connection member 41. Thefourth portion p4 of the second conductive member 22 is used as anexternal terminal connected to the outside.

Thus, the first conductive member 21 electrically connects thesemiconductor chip 10 and the second conductive member 22 (the externalterminal). The first conductive member 21 is, for example, a connector.On the other hand, the third portion p3 of the second conductive member22 functions as a post.

For example, the resin portion 30 covers these members. The resinportion 30 is, for example, a sealing resin. For example, as shown inFIG. 1A, the resin portion 30 includes a first partial region r1. Thefirst partial region r1 is provided around the first portion p1, thethird portion p3, and the first connection member 41.

As shown in FIG. 1B and FIG. 1C, the resin portion 30 does not cover thefourth portion p4 of the second conductive member 22. The fourth portionp4 is exposed from the resin portion 30. Thereby, it is possible toelectrically connect the fourth portion p4 to the outside.

On the other hand, as shown in FIG. 1B, the first conductive member 21is covered with the resin portion 30. The resin portion 30 is providedalso above the first conductive member 21. For example, the secondportion p2 is positioned between a portion of the resin portion 30 andthe semiconductor chip 10 in the Z-axis direction.

As shown in FIG. 1A and FIG. 1B, the second connection member 42 ispositioned between the semiconductor chip 10 and the second portion p2.The second connection member 42 is conductive. The second connectionmember 42 includes, for example, solder. The second connection member 42electrically connects the semiconductor chip 10 and the second portionp2. For example, the second connection member 42 electrically connectsthe first electrode 11 and the second portion p2.

The resin portion 30 further includes a second partial region r2. Thesecond partial region r2 is provided around the second portion p2 andthe second connection member 42.

As shown in FIG. 1A, the second conductive member 22 further includes asecond middle portion mpg in addition to the third portion p3 and thefourth portion p4. The second middle portion mpg is positioned betweenthe third portion p3 and the fourth portion p4 in the third direction(which is aligned with the second direction and is, for example, theX-axis direction in the example). In the example, the third portion p3is positioned higher than the fourth portion p4. For example, theposition of the second middle portion mpg in the first direction (theZ-axis direction) is between the position of the first connection member41 in the first direction and the position of the fourth portion p4 inthe first direction. For example, the third portion p3 is positionedbetween the first connection member 41 and a portion of the resinportion 30 in the Z-axis direction.

As shown in FIG. 1B, the third conductive member 23 includes a fifthportion p5 and a sixth portion p6. The fifth portion p5 overlaps thesemiconductor chip 10 in the first direction (the Z-axis direction). Asshown in FIG. 1A, the third connection member 43 is provided between thefifth portion p5 and the semiconductor chip 10. In the example, thethird connection member 43 is provided between the fifth portion p5 andthe second electrode 12 (e.g., the drain electrode). The thirdconnection member 43 is conductive. The third connection member 43includes, for example, solder. The third connection member 43electrically connects the fifth portion p5 and the semiconductor chip 10(e.g., the second electrode 12).

The third conductive member 23 is, for example, a bed. The thirdconductive member 23 may function as a heat dissipation path of the heatgenerated by the semiconductor chip 10.

The resin portion 30 further includes a third partial region r3. Thethird partial region r3 is provided around the third connection member43.

At least a portion of the sixth portion p6 of the third conductivemember 23 is not covered with the resin portion 30. At least a portionof the sixth portion p6 is exposed from the resin portion 30. The sixthportion p6 is another external terminal connected to the outside.

Thus, the first conductive member 21 is electrically connected to thefirst electrode 11 (e.g., the source electrode). The second conductivemember 22 is electrically connected to the first electrode 11 via thefirst conductive member 21. The third conductive member 23 iselectrically connected to the second electrode 12 (e.g., the drainelectrode). As described above, the fourth conductive member 24 iselectrically connected to the third electrode 13 (e.g., the gateelectrode).

In the example as described above, the first middle portion mp1 ispositioned higher than the second portion p2 and the first portion p1.The position of the first portion p1 in the first direction (the Z-axisdirection) is between the position of the first connection member 41 inthe first direction and the position of the first middle portion mp1 inthe first direction. The position of the second portion p2 in the firstdirection is between the position of the second connection member 42 inthe first direction and the position of the first middle portion mp1 inthe first direction.

The first to fifth conductive members 21 to 25 include, for example, ametal such as Cu, etc. The first to third connection members 41 to 43include, for example, solder, etc. For example, an epoxy resin or thelike is provided in the resin portion 30. As described below, the resinportion 30 may include a filler.

The semiconductor device 110 is, for example, a SOP (small outlinepackage)-type semiconductor device.

In the embodiment as shown in FIG. 1A, an uneven configuration isprovided in the surface of the first portion p1 of the first conductivemember 21. As shown in FIG. 1A, the first portion p1 has a first surface21 f opposing the first connection member 41. The first surface 21 fincludes a recess (a first recess 21 d) and a protrusion (a firstprotrusion 21 p).

The first portion p1 is above the third portion p3. The position in theheight direction of the first recess 21 d is higher than the position inthe height direction of the first protrusion 21 p. The first recess 21 dis recessed in the Z-axis direction when referenced to the firstprotrusion 21 p.

In the example, the first recess 21 d is positioned at an end of thefirst portion p1 (an end of the first conductive member 21). The firstrecess 21 d includes a first bottom portion 21 df. In the example, atleast a portion of the first bottom portion 21 df is perpendicular tothe first direction (the Z-axis direction).

As shown in FIG. 2 , for example, the first protrusion 21 p ispositioned between the first recess 21 d and the second portion p2 inthe second direction (the X-axis direction). For example, the distancebetween the first recess 21 d and the second portion p2 is taken as afirst distance Lx1. The distance between the first protrusion 21 p andthe second portion p2 is taken as a distance Lxp1. The first distanceLx1 is longer than the distance Lxp1.

By providing the first recess 21 d as shown in FIG. 2 , the distancebetween the first portion p1 and the third portion p3 increasespartially at the first recess 21 d. For example, the distance along thefirst direction (the Z-axis direction) between the first recess 21 d andthe third portion p3 is taken as a second distance Lz2. The distancealong the first direction (the Z-axis direction) between the firstprotrusion 21 p and the third portion p3 is taken as a distance Lzp2.The second distance Lz2 is longer than the distance Lzp2.

The first recess 21 d has a depth dz1. The depth dz1 corresponds to thelength along the Z-axis direction between the position in the Z-axisdirection of the surface of the first protrusion 21 p and the positionin the Z-axis direction of the surface of the first recess 21 d. In thecase where the surface of the third portion p3 is flat, for example, thedepth of the first recess 21 d corresponds to the difference between thesecond distance Lz2 and the distance Lzp2.

The thickness of the first connection member 41 positioned between thethird portion p3 and the first recess 21 d (corresponding to the seconddistance Lz2) is thicker than the thickness of the first connectionmember 41 positioned between the third portion p3 and the firstprotrusion 21 p (corresponding to the distance Lzp2).

As described below, the fluctuation of the characteristics can besuppressed by such a first recess 21 d (and the first protrusion 21 p).

For example, in a reference example, an unevenness such as that recitedabove is not provided in the first surface 21 f of the first portion p1.In such a reference example, there are cases where the on-resistanceincreases in a thermal cycle test (TCT) of the semiconductor device. Inparticular, the conditions of the TCT evaluation are more stringent fora semiconductor device used in a wide temperature range. For example, itwas found that the on-resistance of the reference example increaseseasily when a test is performed in which the range is changed between−65° C. and 150° C. for 1000 cycles. By analyzing the samples after theTCT evaluation, it was found that cracks occurred in the solder (thefirst connection member 41) in the samples of which the on-resistanceincreased. In the case where cracks occur, the resistance between theconnector (the first conductive member 21) and the external terminal(the second conductive member 22) increases. It is considered that theon-resistance increases thereby.

By further analyzing the evaluated samples, it was found that the cracksoccur easily at portions where the solder is thin.

In the reference example, an unevenness such as that recited above isnot provided in the first surface 21 f of the first portion p1;therefore, the thickness of the solder fluctuates easily according tothe manufacturing conditions. For example, the cracks occur easily inthe samples in which the solder is thin (portions where the solder isthin). As described below, in the case where the unevenness is notprovided, practically, it is difficult to set the minimum value of thethickness of the solder to be sufficiently thick.

Conversely, in the embodiment, the uneven configuration (the firstrecess 21 d and the first protrusion 21 p) is provided in the firstsurface 21 f of the first portion p1. Thereby, the first connectionmember 41 that is positioned between the first recess 21 d and the thirdportion p3 can be thick. On the other hand, the thickness of the firstconnection member 41 positioned between the first protrusion 21 p andthe third portion p3 can be controlled to be about the same as that ofthe reference example recited above. Therefore, the thickness thatcorresponds to the depth dz1 of the first recess 21 d can be providedstably for the first connection member 41.

As described below, the first recess 21 d and the first protrusion 21 pcan be formed by deforming a metal member (a metal sheet, etc.) used toform the first conductive member 21 by using a die. The depth dz1 of thefirst recess 21 d corresponds to the die and therefore is relativelyuniform. Accordingly, the thickness of the first connection member 41that corresponds to the depth dz1 of the first recess 21 d is uniform.

According to the embodiment, a semiconductor device can be provided inwhich the fluctuation of the characteristics (e.g., the on-resistance)can be suppressed.

As shown in FIG. 2 , in the case where the first middle portion mp1 ispositioned higher than the first portion p1, the end portion of thefirst portion p1 on the first middle portion mp1 side may be bentcurvilinearly. Such a curvilinear bent portion can be considered to be arecess. In such a case, cracks do not occur easily in the solder at thecurvilinear bent portion. In the reference example recited above, evenin the case where the curvilinear bent portion is provided, a recess isnot provided at the other portions. In such a reference example, thecracks do not occur easily at the curvilinear bent portion. However,because a recess is not provided in the other portions, the cracks occureasily at the other portions as described above.

In the embodiment, the first recess 21 d recited above is providedseparately from the curvilinearly bending portion. The first connectionmember 41 can be controlled to have the desired thickness by the firstrecess 21 d. Thereby, the cracks can be suppressed effectively; and theincrease of the on-resistance can be suppressed.

Several experimental results will now be described.

First, as a first experiment, the results when changing the amount ofthe solder will be described for the case where an unevenness such asthat recited above is not provided in the conductive member. In thefirst experiment, the surfaces of the first conductive member 21 and thesecond conductive member 22 opposing each other are flat (the unevennessis 0.1 μm or less). In such a case, even if the amount of the solder isincreased, the thickness of the solder between the flat surfaces of thefirst conductive member 21 and the second conductive member 22 does notchange greatly. This is because in the case where the amount of thesolder is increased, only the amount of the solder at the portions ofthe side surfaces (the tilted surfaces) of the first conductive member21 and the second conductive member 22 increase. Therefore, in the casewhere the surfaces of the first conductive member 21 and the secondconductive member 22 opposing each other are flat, the thickness of thesolder between these flat surfaces is about 5 μm or less and does notbecome 10 μm or more.

If the amount of the solder is increased excessively, the solderundesirably exists past the intended connection portion; and the desiredstructure is not obtained. It is difficult to downsize the semiconductordevice.

Accordingly, the thickness of the solder can be 10 μm or more byintentionally providing the first recess 21 d.

In a second experiment, a metal particle (a Ni ball) is mixed into thesolder material. The diameter (the average diameter) of the metalparticle is 20 μm, 30 μm, or 50 μm. In the second experiment as well,the surfaces of the first conductive member 21 and the second conductivemember 22 opposing each other are flat (the unevenness is 0.1 μm orless). The experiment that uses solder including metal particles havingthree types of diameters such as those recited above shows that thefluctuation of the on-resistance in each case is smaller than the casewhere solder not including a metal particle is used. The fluctuation ofthe on-resistance when the diameter is 30 μm is smaller than thefluctuation of the on-resistance when the diameter is 20 μm. Thefluctuation of the on-resistance when the diameter is 50 μm is smallerthan the fluctuation of the on-resistance when the diameter is 30 μm.

Thus, it is considered that the fluctuation of the on-resistance can besuppressed further in the case where the solder is thick.

FIG. 3 is a graph illustrating the experimental results relating to thesemiconductor device.

FIG. 3 shows the results of the first experiment and the secondexperiment recited above. The horizontal axis of FIG. 3 is a thicknesstc (μm) of the solder. The vertical axis is a fluctuation ΔRon (arelative value) of the on-resistance. The fluctuation ΔRon of theon-resistance is the ratio ((R2−R1)/R1) of the difference between anon-resistance R1 before the thermal cycle test and an on-resistance R2after the thermal cycle test to the on-resistance R1.

In FIG. 3 , the data where the thickness tc of the solder is 10 μmcorresponds to the data when the amount of the solder is appropriate inthe result of the first experiment. The data where the thickness tc ofthe solder is 20 μm, 30 μm, and 50 μm corresponds to the data when thediameter of the metal particle is modified in the second experiment.

As shown in FIG. 3 , the fluctuation ΔRon of the on-resistance can besmall when the thickness tc of the solder exceeds 10 μm. The fluctuationΔRon of the on-resistance is less than a reference value ΔRon1 when thethickness tc of the solder exceeds 10 μm.

Accordingly, it is favorable for the depth dz1 of the first recess 21 dto exceed 10 μm. The thickness of at least a portion of the firstconnection member 41 exceeds 10 μm; and the cracks can be suppressed.The increase of the on-resistance can be suppressed. It is morefavorable for the depth dz1 to be 20 μm or more. The thickness of atleast a portion of the first connection member 41 is 20 μm or more; andthe increase of the on-resistance can be suppressed further.

FIG. 4A and FIG. 4B are cross section microscope photographsillustrating the semiconductor devices.

FIG. 4A corresponds to the semiconductor device 110 according to theembodiment. In the semiconductor device 110, the uneven configuration(the first recess 21 d and the first protrusion 21 p) is provided in thefirst portion p1. FIG. 4B corresponds to a semiconductor device 109 of areference example. In the semiconductor device 109, the unevenconfiguration recited above is not provided in the first portion p1 ofthe first conductive member 21.

In the semiconductor device 109 of the reference example as shown inFIG. 4B, the first connection member 41 between the first portion p1 andthe third portion p3 is thin. The thickness of the first connectionmember 41 is not less than 5 μm but less than 10 μm. Conversely, in thesemiconductor device 110 as shown in FIG. 4A, a portion of the firstconnection member 41 between the first portion p1 and the third portionp3 is thick. In the example, the thickness of a portion of the firstconnection member 41 is, for example, not less than 50 μm and not morethan 60 μm. This is because the uneven configuration (the first recess21 d and the first protrusion 21 p) is provided in the semiconductordevice 110. In the TCT evaluation of the semiconductor device 109,cracks occur easily; and the on-resistance increases easily. In the TCTevaluation of the semiconductor device 110, the cracks are suppressed;and the increase of the on-resistance is suppressed.

An example of the configuration of the line B1-B2 cross section of FIG.1C will now be described.

FIG. 5 is a schematic cross-sectional view illustrating thesemiconductor device according to the first embodiment.

FIG. 5 shows an enlarged portion of the line B1-B2 cross section of FIG.1C.

As shown in FIG. 5 , the fourth conductive member 24, the fifthconductive member 25, a fourth connection member 44, and a fifthconnection member 45 are provided in the semiconductor device 110. Thesemiconductor chip 10 further includes the third electrode 13 (e.g., thegate electrode). The fourth conductive member 24 is electricallyconnected to the semiconductor chip 10 (in the example, the thirdelectrode 13 (e.g., the gate electrode)).

For example, the fourth conductive member 24 includes a seventh portionp7, an eighth portion p8, and a third middle portion mp3. The thirdmiddle portion mp3 is positioned between the seventh portion p7 and theeighth portion p8. The third middle portion mp3 is positioned higherthan the seventh portion p7 and the eighth portion p8.

The fifth connection member 45 that is conductive is provided betweenthe eighth portion p8 and the semiconductor chip 10 (the third electrode13).

On the other hand, the fifth conductive member 25 includes a ninthportion p9, a tenth portion p10, and a fourth middle portion mp4. Thefourth middle portion mp4 is positioned between the ninth portion p9 andthe tenth portion p10. The position of the fourth middle portion mp4 inthe Z-axis direction is between the position of the ninth portion p9 inthe Z-axis direction and the position of the tenth portion p10 in theZ-axis direction.

The fourth connection member 44 is positioned between a portion (theseventh portion p7) of the fourth conductive member 24 and a portion(the ninth portion p9) of the fifth conductive member 25.

The resin portion 30 includes a fourth partial region r4. The fourthpartial region r4 is provided around the portion of the fourthconductive member 24 recited above, the portion of the fifth conductivemember 25 recited above, and the fourth connection member 44.

The tenth portion p10 is not covered with the resin portion 30. Thetenth portion p10 is used as another external terminal connected to theoutside. On the other hand, the fourth conductive member 24 is coveredwith the resin portion 30. In the example, the ninth portion p9 ispositioned between a portion of the resin portion 30 and the fourthconnection member 44 in the Z-axis direction.

The seventh portion p7 has a surface 24 f opposing the ninth portion p9.The surface 24 f includes a seventh partial recess 24 d and a seventhpartial protrusion 24 p.

The seventh partial recess 24 d includes at least one of a seventhpartial bottom portion 24 df, a first distance of the seventh portionp7, or a second distance of the seventh portion p7. At least a portionof the seventh partial bottom portion 24 df is perpendicular to thefirst direction (the Z-axis direction). The first distance of theseventh portion p7 is the distance between the seventh partial recess 24d and the eighth portion p8. The first distance of the seventh portionp7 is longer than the distance between the seventh partial protrusion 24p and the eighth portion p8. The second distance of the seventh portionp7 is the distance along the first direction (the Z-axis direction)between the seventh partial recess 24 d and the ninth portion p9. Thesecond distance of the seventh portion p7 may increase along theorientation from the eighth portion p8 toward the seventh portion p7.

By providing such an uneven configuration in the seventh portion p7, thecracks are suppressed. For example, the fluctuation of thecharacteristics can be suppressed.

The depth of the seventh partial recess 24 d may be similar to the depthdz1 of the first recess 21 d.

Several examples that relate to the uneven configuration of the firstportion p1 will now be described. The description recited below relatingto the uneven configuration of the first portion p1 is applicable alsoto the uneven configuration provided in the seventh portion p7.

FIG. 6A to FIG. 6D are schematic cross-sectional views illustratingother semiconductor devices according to the first embodiment.

In a semiconductor device 111 as shown in FIG. 6A, an unevenconfiguration is provided in the back surface of the first portion p1(the surface on the opposite side of the first surface 21 f). The unevenconfiguration of the back surface of the first portion p1 follows theuneven configuration of the first surface 21 f of the first portion p1.Otherwise, the configuration of the semiconductor device 111 is similarto the configuration of the semiconductor device 110.

The back surface of the first portion p1 may be substantially flat (thesemiconductor device 110) or may have an uneven configuration (thesemiconductor device 111).

In a semiconductor device 112 as shown in FIG. 6B, the first recess 21 dand the first protrusion 21 p are provided in the first surface 21 f ofthe first portion p1. In the semiconductor device 112, the firstdistance Lx1 (the distance between the first recess 21 d and the secondportion p2) is shorter than the distance Lxp1 (the distance between thefirst protrusion 21 p and the second portion p2). The first recess 21 dincludes the first bottom portion 21 df. At least a portion of the firstbottom portion 21 df is perpendicular to the first direction (the Z-axisdirection). Otherwise, the configuration of the semiconductor device 112is similar to the configuration of the semiconductor device 110.

In the semiconductor device 112, the first recess 21 d is providedseparately from the curvilinear bend between the first portion p1 andthe first middle portion mp1. At least a portion of the first bottomportion 21 df of the first recess 21 d is aligned with the X-Y plane.Even in the case where such a first recess 21 d is provided, the firstconnection member 41 can be stably thick at the portion corresponding tothe first bottom portion 21 df. Thereby, the region where the cracks canbe suppressed can be enlarged.

In a semiconductor device 113 as shown in FIG. 6C as well, the firstrecess 21 d and the first protrusion 21 p are provided in the firstsurface 21 f of the first portion p1. The first bottom portion 21 df ofthe first recess 21 d is tilted in the semiconductor device 113. Asdescribed above, the distance along the first direction (the Z-axisdirection) between the first recess 21 d and the third portion p3 istaken as the second distance Lz2. The second distance Lz2 increasesalong the orientation from the second portion p2 toward the firstportion p1. Otherwise, the configuration of the semiconductor device 113is similar to the configuration of the semiconductor device 110.

The first recess 21 d recited above is provided in the semiconductordevice 113. The first connection member 41 is filled into such a firstrecess 21 d. The first connection member 41 can be stably thick at theportion corresponding to the first recess 21 d. Thereby, the regionwhere the cracks can be suppressed can be enlarged.

In a semiconductor device 114 as shown in FIG. 6D, the first recess 21 dand multiple protrusions are provided in the first surface 21 f of thefirst portion p1. The first protrusion 21 p corresponds to one of themultiple protrusions. The first recess 21 d is positioned between themultiple protrusions. Otherwise, the configuration of the semiconductordevice 114 is similar to the configuration of the semiconductor device110. In the semiconductor device 114 as well, the first connectionmember 41 can be stably thick at the portion corresponding to the firstrecess 21 d. Thereby, the region where the cracks can be suppressed canbe enlarged.

In the semiconductor device 114, the recess (the first recess 21 d) isprovided inward from the two end portions of the first portion p1 and isseparated from the two end portions of the first portion p1. The two endportions are a first end portion pa1 and a second end portion pb1. Thedirection from the second end portion pb1 toward the first end portionpa1 is aligned with the second direction (e.g., the X-axis direction).The second end portion pb1 is the boundary portion (the transitionportion) between the first portion p1 and the first middle portion mp1.

In the semiconductor devices 111 to 114 as well, the fluctuation of thecharacteristics (e.g., the increase of the on-resistance) can besuppressed.

Thus, in the embodiment, the recess (the first recess 21 d) may includeat least one of a first bottom portion 21 df such as that recited below,a first distance Lx1 such as that recited below, or a second distanceLz2 such as that recited below. At least a portion of the first bottomportion 21 df is perpendicular to the first direction (the Z-axisdirection). The first distance Lx1 is the distance between the firstrecess 21 d and the second portion p2. The first distance Lx1 is longerthan the distance Lxp1 between the first protrusion 21 p and the secondportion p2. The second distance Lz2 is the distance along the firstdirection (the Z-axis direction) between the first recess 21 d and thethird portion p3. The second distance Lz2 increases along theorientation from the second portion p2 toward the first portion p1.

In the example recited above, the uneven configuration is provided inthe first portion p1. In the embodiment as described below, an unevenconfiguration may be provided in the third portion p3.

FIG. 7 is a schematic cross-sectional view illustrating anothersemiconductor device according to the first embodiment.

FIG. 7 is an enlarged view of a cross section corresponding to lineA1-A2 of FIG. 1C.

In the semiconductor device 120 as shown in FIG. 7 , an unevenconfiguration is provided in the surface of the third portion p3 of thesecond conductive member 22. On the other hand, in the example, anuneven configuration is not provided in the surface (the first surface21 f) of the first portion p1 of the first conductive member 21. In thesemiconductor device 120, an uneven configuration may be furtherprovided in the first surface 21 f.

An example of the uneven configuration provided in the third portion p3will now be described. The third portion p3 has a second surface 22 f.The second surface 22 f opposes the first connection member 41. Thesecond surface 22 f includes a recess (a second recess 22 d) and aprotrusion (a second protrusion 22 p).

The second recess 22 d includes a second bottom portion 22 df. In theexample, at least a portion of the second bottom portion 22 df isperpendicular to the first direction (the Z-axis direction).

The second recess 22 d includes a third distance Lx3. The third distanceLx3 is the distance between the second recess 22 d and the fourthportion p4. The third distance Lx3 is longer than a distance Lxp3between the second protrusion 22 p and the fourth portion p4.

The second recess 22 d includes a fourth distance Lz4. The fourthdistance Lz4 is the distance along the first direction (the Z-axisdirection) between the second recess 22 d and the first portion p1. Thesecond protrusion 22 p includes a distance Lzp4. The distance Lzp4 isthe distance along the first direction (the Z-axis direction) betweenthe second protrusion 22 p and the first portion p1. The fourth distanceLz4 is longer than the distance Lzp4.

A depth dz2 of the second recess 22 d is the distance along the Z-axisdirection between the position of the second recess 22 d in the Z-axisdirection and the position of the second protrusion 22 p in the Z-axisdirection. The depth dz2 of the second recess 22 d corresponds to thedifference between the fourth distance Lz4 and the distance Lzp4.

By providing such an uneven configuration (the second recess 22 d andthe second protrusion 22 p), the thickness of the first connectionmember 41 between the first portion p1 and the third portion p3 can beincreased stably. Thereby, the cracks are suppressed. For example, thefluctuation of the characteristics (e.g., the increase of theon-resistance) can be suppressed.

It is favorable for the depth dz2 of the second recess 22 d to exceed 10μm. It is more favorable for the depth dz2 to be 20 μm or more.

In the semiconductor device 120 as recited above, an unevenconfiguration is provided in the second surface 22 f of the thirdportion p3. On the other hand, in the semiconductor device 110 asdescribed above, an uneven configuration is provided in the firstsurface 21 f of the first portion p1. In the manufacturing processes asdescribed below, a method may be considered in which the material (e.g.,the solder paste, etc.) used to form the first connection member 41 isplaced on the third portion p3; and the first portion p1 is placed onthe material used to form the first connection member 41. In such acase, the material can be placed stably if the upper surface of thethird portion p3 is flat. In such a case, it is favorable for an unevenconfiguration to be provided in the lower surface of the first portionp1. On the other hand, a method also may be considered in which thematerial that is used to form the first connection member 41 has, forexample, a sheet configuration; and the material that has the sheetconfiguration is transferred onto the conductive member. In such a case,the material that has the sheet configuration can be placed stably evenin the case where the uneven configuration is provided in the uppersurface of the third portion p3.

Several examples that relate to the uneven configuration of the thirdportion p3 will now be described. The description recited below relatingto the uneven configuration of the third portion p3 is applicable alsoto the uneven configuration of the ninth portion p9.

FIG. 8A to FIG. 8D are schematic cross-sectional views illustratingother semiconductor devices according to the first embodiment.

In a semiconductor device 121 as shown in FIG. 8A, an unevenconfiguration is provided in the back surface of the third portion p3(the surface on the opposite side of the second surface 22 f). Theuneven configuration of the back surface follows the unevenconfiguration of the second surface 22 f. Otherwise, the configurationof the semiconductor device 121 is similar to the configuration of thesemiconductor device 120.

The back surface of the third portion p3 may be substantially flat (thesemiconductor device 120) or may have an uneven configuration (thesemiconductor device 121).

In a semiconductor device 122 as shown in FIG. 8B, the second recess 22d and the second protrusion 22 p are provided in the second surface 22 fof the third portion p3. In the semiconductor device 122, the thirddistance Lx3 (the distance between the second recess 22 d and the fourthportion p4) is shorter than the distance Lxp3 (the distance between thesecond protrusion 22 p and the fourth portion p4). The second recess 22d includes the second bottom portion 22 df. At least a portion of thesecond bottom portion 22 df is perpendicular to the first direction (theZ-axis direction). Otherwise, the configuration of the semiconductordevice 122 is similar to the configuration of the semiconductor device120.

In the semiconductor device 122, the second recess 22 d is providedseparately from the curvilinear bend between the third portion p3 andthe second middle portion mpg. At least a portion of the second bottomportion 22 df of the second recess 22 d is aligned with the X-Y plane.Even in the case where such a second recess 22 d is provided, the firstconnection member 41 can be stably thick at the portion corresponding tothe second bottom portion 22 df. Thereby, the region where the crackscan be suppressed can be enlarged.

In a semiconductor device 123 as shown in FIG. 8C as well, the secondrecess 22 d and the second protrusion 22 p are provided in the secondsurface 22 f of the third portion p3. As described above, the distancealong the first direction (the Z-axis direction) between the secondrecess 22 d and the first portion p1 is taken as the fourth distanceLz4. The fourth distance Lz4 increases along the orientation from thefourth portion p4 toward the third portion p3. Otherwise, theconfiguration of the semiconductor device 123 is similar to theconfiguration of the semiconductor device 120.

The second recess 22 d recited above is provided in the semiconductordevice 123. The first connection member 41 is filled into such a secondrecess 22 d. The first connection member 41 can be stably thick at theportion corresponding to the second recess 22 d. Thereby, the regionwhere the cracks can be suppressed can be enlarged.

In a semiconductor device 124 as shown in FIG. 8D, the second recess 22d and multiple protrusions are provided in the second surface 22 f ofthe third portion p3. The second protrusion 22 p corresponds to one ofthe multiple protrusions. The second recess 22 d is positioned betweenthe multiple protrusions. Otherwise, the configuration of thesemiconductor device 124 is similar to the configuration of thesemiconductor device 120. In the semiconductor device 124 as well, thefirst connection member 41 can be stably thick at the portioncorresponding to the second recess 22 d. Thereby, the region where thecracks can be suppressed can be enlarged.

In the semiconductor device 124, the recess (the second recess 22 d) isprovided inward from the two end portions of the third portion p3 and isseparated from the two end portions of the third portion p3. The two endportions are a third end portion pa3 and a fourth end portion pb3. Thedirection from the fourth end portion pb3 toward the third end portionpa3 is aligned with the third direction (e.g., the X-axis direction).The fourth end portion pb3 is the boundary portion (the transitionportion) between the third portion p3 and the second middle portion mpg.

In the semiconductor devices 121 to 124 as well, the fluctuation of thecharacteristics (e.g., the increase of the on-resistance) can besuppressed.

Thus, in the embodiment, the recess (the second recess 22 d) may includeat least one of a second bottom portion 22 df such as that recitedbelow, a third distance Lx3 such as that recited below, or a fourthdistance Lz4 such as that recited below. At least a portion of thesecond bottom portion 22 df is perpendicular to the first direction (theZ-axis direction). The third distance Lx3 is the distance between thesecond recess 22 d and the fourth portion p4. The third distance Lx3 islonger than the distance between the second protrusion 22 p and thefourth portion p4. The fourth distance Lz4 is the distance along thefirst direction between the second recess 22 d and the first portion p1.The fourth distance Lz4 increases along the orientation from the fourthportion p4 toward the third portion p3.

Second Embodiment

A second embodiment relates to manufacturing methods. Examples of amethod for manufacturing the first conductive member 21 and a method formanufacturing a semiconductor device will now be described.

FIG. 9A to FIG. 9C are schematic cross-sectional views illustrating themethod for manufacturing a portion of the semiconductor device accordingto the second embodiment.

These drawings illustrate the method for manufacturing the firstconductive member 21 (a component of a portion of the semiconductordevice 110).

A conductive sheet 21A is prepared as shown in FIG. 9A. The conductivesheet 21A is, for example, a Cu sheet.

As shown in FIG. 9B, the conductive sheet 21A is deformed by applyingpressure to a first die M1 and a second die M2 in the state in which theconductive sheet 21A is placed between the dies. For example, thesurface of the first die M1 opposing the second die M2 includes a recessregion Mp1, a recess region Mp2, and a protrusion region Mp3. Thesurface of the second die M2 opposing the first die M1 includes aprotrusion region Mq1, a protrusion region Mq2, and a recess region Mq3.The first portion p1 is formed from one region of the conductive sheet21A (the region between the recess region Mp1 and the protrusion regionMq1). The second portion p2 is formed from one other region of theconductive sheet 21A (the region between the recess region Mp2 and theprotrusion region Mq2). The first middle portion mp1 is formed from oneother region of the conductive sheet 21A (the region between theprotrusion region Mp3 and the recess region Mq3).

A recess Mpd and a protrusion Mpp are provided in the recess region Mp1.A protrusion is formed in the conductive sheet 21A by the portioncorresponding to the recess Mpd. A recess is formed in the conductivesheet 21A by the portion corresponding to the protrusion Mpp. Theprotrusion of the conductive sheet 21A becomes the first protrusion 21p. The recess of the conductive sheet 21A becomes the first recess 21 d.The conductive sheet 21A is removed from the dies.

As shown in FIG. 9C, a portion of one region of the conductive sheet 21A(the region between the recess region Mp1 and the protrusion region Mq1)is cut and removed. Thereby, the first portion p1 is formed. Thereby,the first conductive member 21 illustrated in FIG. 1A is obtained.

In FIG. 9B, the surface configuration of the protrusion region Mq1 ofthe second die M2 may be caused to follow the surface configuration (theuneven configuration) of the recess region Mp1 of the first die M1. Forexample, a protrusion and a recess may be provided in the protrusionregion Mq1; and the first die M1 and the second die M2 may be overlaidso that the protrusion and the recess fit respectively into the recessMpd and the protrusion Mpp of the recess region Mp1. In such a case, thefirst conductive member 21 illustrated in FIG. 6A is obtained. Variousmodifications of the surface configurations of the two dies arepossible. Various configurations of the first recess 21 d and the firstprotrusion 21 p are obtained.

An example of the method for manufacturing the semiconductor deviceincluding the first conductive member 21 will now be described.

FIG. 10A to FIG. 10E are schematic cross-sectional views illustratingthe method for manufacturing the semiconductor device according to thesecond embodiment.

A leadframe 28 is prepared as shown in FIG. 10A. The leadframe 28includes a portion used to form the second conductive member 22 and aportion used to form the third conductive member 23.

As shown in FIG. 10B, solder paste 43 b is coated onto a portion (thefifth portion p5) of the third conductive member 23.

As shown in FIG. 10C, the semiconductor chip 10 is placed on the solderpaste 43 b. The third conductive member 23 and the semiconductor chip 10are bonded by melting the solder paste 43 b.

As shown in FIG. 10D, solder paste 42 b is coated onto the semiconductorchip 10; and solder paste 41 b is coated onto a portion (the thirdportion p3) of the second conductive member 22.

As shown in FIG. 10E, the first conductive member 21 is placed on thesolder paste 42 b and the solder paste 41 b. The second portion p2 ispositioned on the solder paste 42 b. The first portion p1 is positionedon the solder paste 41 b. The solder paste 42 b and the solder paste 41b are melted. The semiconductor chip 10 and the second portion p2 of thefirst conductive member 21 are bonded. The first portion p1 of the firstconductive member 21 and the third portion p3 of the second conductivemember 22 are bonded.

Subsequently, the resin portion 30 is formed by molding. Further, theunnecessary portions of the leadframe 28 are cut. Thereby, thesemiconductor device (e.g., the semiconductor device 110 or the like) isobtained.

Third Embodiment

FIG. 11 is a schematic cross-sectional view illustrating a semiconductordevice according to a third embodiment.

FIG. 11 is a cross-sectional view of a portion corresponding to FIG. 1A.

In the semiconductor device 130 according to the embodiment as shown inFIG. 11 , the first connection member 41 includes a particle 41 p. Theparticle 41 p is, for example, a metal ball. The particle 41 p is, forexample, a ball including Ni. Otherwise, the configuration of thesemiconductor device 130 is similar to that of, for example, thesemiconductor device according to the first embodiment (e.g., thesemiconductor device 110, etc.).

In the semiconductor device 130, the particle 41 p that is inside thefirst connection member 41 (e.g., the solder) is positioned between thefirst portion p1 and the third portion p3. The minimum value of thedistance between the first portion p1 and the third portion p3 isdetermined by the size of the particle 41 p. Thereby, it is easy to setthe thickness of the first connection member 41 to be at least theappropriate thickness. Thereby, for example, the cracks are suppressed.A semiconductor device can be provided in which the fluctuation of thecharacteristics can be suppressed.

In the embodiment, it is favorable for the size (e.g., the diameter) ofthe particle 41 p to exceed 10 μm and to be 20 μm or less. By settingthe size to exceed 10 μm, the minimum value of the distance between thefirst portion p1 and the third portion p3 can be greater than 10 μm.

The particle 41 p does not contribute to the bonding. The size of theparticle 41 p is controlled to be not more than the appropriate size.Thereby, the appropriate bonding strength can be maintained. Forexample, in the case where the size of the particle 41 p is excessivelylarge, the surface area of the effective connection region becomessmall. For example, there are cases where the portion (the bondingportion) where the first portion p1 and the third portion p3 oppose eachother is set to be small to downsize the package size. Even in such acase, by setting the size of the particle 41 p to be 20 μm or less, thesurface area of the effective connection region can be maintained in apractical range.

There is a method in which the solder paste 41 b or the like is coatedby dispensing from a nozzle. If the size of the particle 41 p isexcessively large, the nozzle may clog; and stable manufacturing may bedifficult. By setting the size of the particle 41 p to be 20 μm or less,the clogging of the nozzle can be suppressed. Stable manufacturing ispossible.

The concentration of the particles 41 p is controlled to be not morethan the appropriate concentration. Thereby, the appropriate bondingstrength can be maintained.

In the semiconductor device 130, the minimum value of the distancebetween the first portion p1 and the third portion p3 is controlled bythe particle 41 p. Further, because the uneven configuration is providedin the first portion p1, the distance between the first portion p1 andthe third portion p3 is controlled based on the depth of the recess.Thereby, the thickness of the first connection member 41 can becontrolled more stably to be thick. The fluctuation of thecharacteristics can be suppressed more stably.

FIG. 12 is a schematic cross-sectional view illustrating anothersemiconductor device according to the third embodiment.

FIG. 12 is a cross-sectional view of a portion corresponding to FIG. 1A.

In the semiconductor device 131 according to the embodiment as shown inFIG. 12 as well, the first connection member 41 includes the particle 41p. In the semiconductor device 131, an uneven configuration is notprovided in the first portion p1. Otherwise, the configuration of thesemiconductor device 131 is similar to that of the semiconductor device130.

In the semiconductor device 131, the minimum value of the distancebetween the first portion p1 and the third portion p3 is controlled bythe particle 41 p. In the semiconductor device 131 as well, thefluctuation of the characteristics can be suppressed.

FIG. 13 is a cross section microscope photograph illustrating thesemiconductor device according to the third embodiment.

FIG. 13 corresponds to the semiconductor device 131. As shown in FIG. 13, the distance between the first portion p1 and the third portion p3 iscontrolled by the particle 41 p. In the example, the distance betweenthe first portion p1 and the third portion p3 is about 20 μm to about 30μm.

In the embodiment, it is favorable for the “0.02% yield strength” (e.g.,referring to JIS Z 2241:2011) of the first connection member 41 to be10.5 MPa or more.

For example, there are cases where solder including Pb, Ag, and Sn isused as the first connection member 41. In such a case, the “0.02% yieldstrength” is 10.5 MPa for a first solder material in which theconcentration of Ag is 1 wt % and the concentration of Sn is 3 wt %. Onthe other hand, the “0.02% yield strength” is 12.5 MPa for a secondsolder material in which the concentration of Ag is 2 wt % and theconcentration of Sn is 8 wt %. The cracks and the change of theon-resistance after the TCT evaluation is clearly better for the casewhere the second solder material is used than for the case where thefirst solder material is used.

Examples of experimental results relating to the material of the resinportion 30 will now be described.

In a first experiment, the material that is used as the resin portion 30is modified. The resin portion 30 includes an epoxy resin and a filler.The filler is a silica sphere. The concentration of the filler ismodified.

An uneven configuration is not provided in the first portion p1 and thethird portion p3 of the semiconductor device of the experiment samples.Various evaluations of the semiconductor devices that were made wereperformed. The following four evaluation results will now be described.

In a first evaluation, peeling after a MSL (Moisture Sensitivity Level)test is evaluated. For example, the peeling between the resin portionand the conductive member is observed. In a second evaluation, thecracks of the resin portion 30 after the MSL test are evaluated. Theconditions of the MSL test recited above are 85° C. and 85 RH % for 48hours and three IR reflow passes (260° C. max).

In a third evaluation, the cracks of the solder (the first connectionmember 41) after the TCT are observed using a microscope. In a fourthevaluation, the fluctuation of the on-resistance after the TCT isevaluated.

FIG. 14 is a table showing the evaluation results of the semiconductordevices.

The evaluation results of first to seventh samples SP01 to SP07 areshown in FIG. 14 .

In the first sample SP01, the epoxy resin M04 is used; and a fillerconcentration Cf is 88.0 wt % (weight %). In the second sample SP02, theepoxy resin M02 is used; and the filler concentration Cf is 87.5 wt %.In the third sample SP03, the epoxy resin M01 is used; and the fillerconcentration Cf is 85.0 wt %. In the fourth sample SP04, the epoxyresin M03 is used; and the filler concentration Cf is 84.0 wt %. In thefifth sample SP05, the epoxy resin M05 is used; and the fillerconcentration Cf is 84.0 wt %. In the sixth sample SP06, the epoxy resinM06 is used; and the filler concentration Cf is 80.0 wt %. In theseventh sample SP07, the epoxy resin M07 is used; and the fillerconcentration Cf is 77.0 wt %.

In FIG. 14 , the evaluation results of a linear expansion coefficient α(×10⁻⁶/K) and a glass transition temperature Tg (° C.) of the resinmaterial (the epoxy resin and the filler) are shown. The results offirst to fourth evaluations V1 to V4 recited above also are shown inFIG. 14 . The results are shown as evaluation values having the fourlevels of E1 to E4. The evaluation value E1 is “poor/substandard.” Theevaluation value E2 is “about the same as reference.” The evaluationvalue E3 is “good/exceeding reference.” The evaluation value E4 is“greatly exceeding reference and better than result 3.”

As shown in FIG. 14 , the results of the first evaluation V1 (thepeeling in the MSL test) are good and are the evaluation value E3 forall of the samples. The results of the second evaluation V2 (the cracksof resin portion 30 for the MSL test) are good and are the evaluationvalue E3 for all of the samples.

The results of the third evaluation V3 (the cracks for the TCT) and theresults of the fourth evaluation V4 (the fluctuation of theon-resistance for the TCT) are poor and are the evaluation value E1 forthe first to third samples SP01 to SP03. The results are the evaluationvalue E2 for the fourth sample SP04 and the fifth sample SP05. Theresults are good and are the evaluation value E3 for the sixth sampleSP06. The results are even better and are the evaluation value E4 forthe seventh sample SP07.

From the results of FIG. 14 , it is favorable for the linear expansioncoefficient α of the resin portion 30 to be large. It is favorable forthe linear expansion coefficient α to be, for example, not less than13×10⁻⁶/K and not more than 17×10⁻⁶/K. As shown in FIG. 14 , goodresults are obtained for the third evaluation V3 (the cracks for theTCT) and the fourth evaluation V4 (the fluctuation of the on-resistancefor the TCT).

For example, the linear expansion coefficient α of Cu is about17×10⁻⁶/K. It is considered that it is favorable for the linearexpansion coefficient α of the resin portion 30 to be near the linearexpansion coefficient α of the conductive member (e.g., Cu). In ageneral semiconductor device, the linear expansion coefficient α of theresin portion (the sealing material) is designed to be near the linearexpansion coefficient α of silicon (about 6×10⁻⁶/K) in many cases. Inthe embodiment, it is considered that stress concentrates particularlyat the bonding portion between the connector and the post. In the caseof such a structure, it is considered that it is favorable for thelinear expansion coefficient α of the resin portion 30 to be near thelinear expansion coefficient α of the conductive member (e.g., Cu)rather than near the linear expansion coefficient α of the semiconductor(silicon). Thereby, for example, it is easy to suppress the cracks ofthe bonding portion (the first connection member 41) between theconnector and the post. The fluctuation of the characteristics issuppressed.

In the embodiment, the resin portion 30 includes multiple fillers. It isfavorable for the concentration of the multiple fillers in the resinportion 30 to be not less than 76 weight % and not more than 84 weight%. As shown in FIG. 14 , good results are obtained for the thirdevaluation V3 (the cracks for the TCT) and the fourth evaluation V4 (thefluctuation of the on-resistance for the TCT).

The filler includes, for example, at least one selected from the groupconsisting of an oxide including Si (e.g., silica), an oxide includingMg, and an oxide including Al.

FIG. 15 is a table showing evaluation results of the semiconductordevice.

FIG. 15 shows the results of a second experiment. In the secondexperiment, the material of the epoxy resin of the resin portion 30 ismodified. The glass transition temperature Tg is modified by modifyingthe material of the epoxy resin. In the second experiment, the fillerconcentration Cf is constant and is 80.0 wt %. In the second experimentas well, an uneven configuration is not provided in the first portion p1and the third portion p3 of the semiconductor device.

In an eighth sample SP08 as shown in FIG. 15 , the epoxy resin M06 isused; and the glass transition temperature Tg is 120° C. In a ninthsample SP09, the epoxy resin M08 is used; and the glass transitiontemperature Tg is 150° C. In a tenth sample SP10, the epoxy resin M09 isused; and the glass transition temperature Tg is 170° C.

As shown in FIG. 15 , good results are obtained for the TCT evaluationwhen the glass transition temperature Tg is high. The maximumtemperature of the TCT evaluation is 150° C. It is considered that goodresults are obtained when the glass transition temperature Tg is notless than the maximum temperature of the TCT evaluation.

In the embodiment, it is favorable for the glass transition temperatureTg of the resin portion 30 to be 150° C. or more. The cracks can besuppressed further. The fluctuation of the characteristics can besuppressed more effectively.

For example, in a power semiconductor device, a structure has beenproposed in which a connector having a sheet configuration of copper orthe like is used instead of wire bonding as the bonding structurebetween the semiconductor chip and the external terminal. Thereby, forexample, a low resistance is obtained. For such a semiconductor device,it is necessary to satisfy a stringent reliability standard. Cracks mayoccur in the solder in the TCT (the temperature cycle test); and theon-resistance may increase.

According to the embodiments, a semiconductor device can be provided inwhich the fluctuation of the characteristics can be suppressed.

In the specification of the application, “perpendicular” and “parallel”refer to not only strictly perpendicular and strictly parallel but alsoinclude, for example, the fluctuation due to manufacturing processes,etc. It is sufficient to be substantially perpendicular andsubstantially parallel.

Hereinabove, exemplary embodiments of the invention are described withreference to specific examples. However, the embodiments of theinvention are not limited to these specific examples. For example, oneskilled in the art may similarly practice the invention by appropriatelyselecting specific configurations of components included insemiconductor devices such as semiconductor chips, conductive members,connection members, insulating members, etc., from known art. Suchpractice is included in the scope of the invention to the extent thatsimilar effects thereto are obtained.

Further, any two or more components of the specific examples may becombined within the extent of technical feasibility and are included inthe scope of the invention to the extent that the purport of theinvention is included.

Moreover, all semiconductor devices practicable by an appropriate designmodification by one skilled in the art based on the semiconductordevices described above as embodiments of the invention also are withinthe scope of the invention to the extent that the spirit of theinvention is included.

Various other variations and modifications can be conceived by thoseskilled in the art within the spirit of the invention, and it isunderstood that such variations and modifications are also encompassedwithin the scope of the invention.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the invention.

What is claimed is:
 1. A semiconductor device, comprising: asemiconductor chip; a first conductive member including a first portionand a second portion, the second portion being electrically connected tothe semiconductor chip, a direction from the semiconductor chip towardthe second portion being aligned with a first direction, a directionfrom the second portion toward the first portion being aligned with asecond direction crossing the first direction; a second conductivemember including a third portion and a fourth portion; a firstconnection member provided between the first portion and the thirdportion, the first connection member being conductive; and a resinportion including a first partial region, the first partial region beingprovided around the first portion, the third portion, and the firstconnection member, at least a portion of the fourth portion not beingcovered with the resin portion, a direction from the third portiontoward the fourth portion being aligned with a third direction crossingthe first direction, the third portion having a second surface opposingthe first connection member, the second surface including a recess and aprotrusion, the recess including at least one of a second bottomportion, a third distance, or a fourth distance, at least a portion ofthe second bottom portion being perpendicular to the first direction,the third distance being a distance between the recess and the fourthportion, the third distance being longer than a distance between theprotrusion and the fourth portion, the fourth distance being a distancealong the first direction between the recess and the first portion, thefourth distance increasing along an orientation from the fourth portiontoward the third portion.
 2. The device according to claim 1, whereinthe recess is provided inward from two end portions of the third portionand is separated from the two end portions of the third portion.
 3. Thedevice according to claim 1, wherein a plurality of the protrusions areprovided, and the recess is positioned between the protrusions.
 4. Thedevice according to claim 1, wherein a depth of the recess exceeds 10μm.
 5. The device according to claim 4, wherein the depth of the recessis 60 μm or less.
 6. The device according to claim 1, wherein aplurality of the protrusions are provided, and the recess is positionedbetween the protrusions.
 7. The device according to claim 1, furthercomprising; a second connection member, the second connection memberbeing conductive, and the second connection member electricallyconnecting the semiconductor chip and the second portion and beingpositioned between the semiconductor chip and the second portion, theresin portion further including a second partial region provided aroundthe second portion and the second connection member.
 8. The deviceaccording to claim 1, further comprising: a third conductive memberincluding a fifth portion; and a third connection member providedbetween the fifth portion and the semiconductor chip, the thirdconnection member being conductive, the resin portion further includinga third partial region provided around the fifth portion and the thirdconnection member.
 9. The device according to claim 8, wherein the thirdconductive member further includes a sixth portion, and at least aportion of the sixth portion is not covered with the resin portion. 10.The device according to claim 1, wherein the first connection memberincludes a particle, and a size of the particle exceeds 10 μm and is 20μm or less.
 11. The device according to claim 1, wherein the resinportion includes a plurality of fillers, and a concentration of thefillers in the resin portion is not less than 76 weight % and not morethan 84 weight %.